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EGF10A THRU EGF10M
SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
D ENTE TENTE D PA T PA
0.115(2.92) 0.090(2.28)
DO-214AC
FEATURES
0.064(1.63) 0.050(1.27) 0.181(4.60) 0.157(4.00)
0.016(0.40) 0.006(0.15) 0.102(2.60) 0.079(2.00) 0.050(1.27) 0.030(0.76) 0.220(5.60) 0.190(4.83)
GPRC (Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications Superfast recovery time for high efficiency Built-in strain relief Easy pick and place o High temperature soldering guaranteed: 260 C/10 seconds, at terminals * Plastic package has Underwriters Laboratory Flammability Classification 94V-0
* * * * * * *
MECHANICAL DATA
Case : JEDEC DO-214AC molded plastic over passivated chip Terminals : Solder plated , solderable per MIL-STD-750, Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight : 0.002 ounes , 0.064 gram
*Dimensions in inches and (millimeters)
TM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature SYMBOLS unless otherwise specified. Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TA=75 C Peak forward surge current 8.3ms single half sine-wave IFSM superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0 A Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range TA=25 C o TA=125 C o TA=150 C
o o o
EGF10 A
50 35 50
B
100 70 100
D
200 140 200
F
300 210 300
G
400 280 400
J
600 420 600
K
800 560 800
M
1000 700 1000
UNITS Volts Volts Volts Amps
VRRM VRMS VDC I (AV)
1.0
30 1.0 5 30 50 50 15 75 25 -65 to +175 1.25
25 1.7 5 50 75
Amps Volts
VF
IR
uA
trr CJ R R
JA JL
nS pF
o
C/W
o
TJ,TSTG
-55 to +150
C
NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts (3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
REV. : 0
Zowie Technology Corporation
RATINGS AND CHARACTERISTIC CURVES EGF10A THRU EGF10M
FIG.1 - FORWARD CURRENT DERATING CURVE 1.0 AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
RESISTIVE OR INDUCTIVE LOAD
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 PEAK FORWARD SURGE CURRENT, AMPERES 25 20
EGF10A~EGF10G
TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)
EGF10A~EGF10G EGF10J~EGF10M
0.5
15
EGF10J~EGF10M
10 5 0
0 0 25 50 75 100 125
o
150
175
1
10 NUMBER OF CYCLES AT 60Hz
100
AMBIENT TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10.00 IINSTANTANEOUS FORWARD CURRENT, AMPERES INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES
PULSE WIDTH=300uS 1% DUTY CYCLE
FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100
10
1.00
0.10
1
TJ=125 C TJ=150 C
o
o
0.01 0.2
EGF10J~EGF10M EGF10G EGF10A~EGF10F
0.1 0 1.8 20 40 60 80 100 110 PERCENT OF RATED PEAK REVERSE VOLTAGE,%
0.4
0.6
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
200
JUNCTION CAPACITANCE, pF
TRANSIENT THERMAL IMPEDANCE( C/W)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
TJ = 25 C
o
FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE 100
100 60 40
20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, VOLTS
o
10
1
0.1 0.01
0.10
1.0
10
100
t , PULSE DURATION, sec
REV. : 0
Zowie Technology Corporation

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